发明名称 |
PIXEL ARRAY FOR DETECTOR HAVING THIN FILM TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A pixel array for a detector having a TFT(Thin Film Transistor) structure and a manufacturing method thereof are provided to be capable of preventing the attenuation of detected gas or infrared ray information in short time due to thermal conductivity. CONSTITUTION: A pixel array for a detector is provided with a semiconductor substrate(31) having an IC(Integrated Circuit) for reading, a detecting part separated from the semiconductor substrate as much as the height of an air gap, an insulating pillar(35a) for physically connecting the detecting part with the semiconductor substrate. Preferably, the pixel array further includes a protecting layer for enclosing the detecting part. Preferably, the insulating pillar and the protecting layer are made of a silicon nitride layer. Preferably, the detecting part includes a silicon layer, a gate isolating layer(38) on the silicon layer, a gate made of a detecting layer and an absorbing layer(40), a channel region(44) in the silicon layer, and a source/drain region(41a,42a) at both sides of the gate in the silicon layer.
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申请公布号 |
KR20040041262(A) |
申请公布日期 |
2004.05.17 |
申请号 |
KR20020069434 |
申请日期 |
2002.11.09 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHO, SEONG MOK;KIM, GWI DONG;RYU, SANG UK;YOO, BYEONG GON;YOO, IN GYU;YOO, JONG SEON;YOON, SEONG MIN |
分类号 |
H01L31/09;(IPC1-7):H01L31/09 |
主分类号 |
H01L31/09 |
代理机构 |
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主权项 |
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地址 |
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