发明名称 Method of forming a via hole through a glass wafer
摘要 A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the glass wafer, forming a via-patterned portion on one side of the material layer, performing a first etching in which the via-patterned portion is etched to form a preliminary via hole, eliminating any remaining patterning material used in the formation of the via-patterned portion, performing a second etching in which the preliminary via hole is etched to form a via hole having a smooth surface and extending through the glass wafer, and eliminating the material layer. The method according to the present invention is able to form a via hole through a glass wafer without allowing formation of an undercut or minute cracks, thereby increasing the yield and reliability of MEMS elements.
申请公布号 US2004092105(A1) 申请公布日期 2004.05.13
申请号 US20030681217 申请日期 2003.10.09
申请人 LEE MOON-CHUL;CHOI HYUNG;JUNG KYU-DONG;JANG MI;HONG SEOG-WOO;CHUNG SEOK-WHAN;JUN CHAN-BONG;KANG SEOK-JIN 发明人 LEE MOON-CHUL;CHOI HYUNG;JUNG KYU-DONG;JANG MI;HONG SEOG-WOO;CHUNG SEOK-WHAN;JUN CHAN-BONG;KANG SEOK-JIN
分类号 H01L21/84;B81B1/00;B81C1/00;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/84
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