| 摘要 |
<P>PROBLEM TO BE SOLVED: To minimize the roughness of a surface of a formed high dielectric film, in a method for forming the high dielectric film by an MOCVD method. <P>SOLUTION: First, an organic metal compound raw material of the high dielectric film is supplied to a surface of a substrate to be processed, under a condition where a residence time of the organic metal compound raw material in a processing vessel becomes relatively long, to form a crystal nucleus of high area density on the surface of the substrate to be processed. Then the organic metal compound raw material is supplied under the conditions where the residence time becomes relatively short. <P>COPYRIGHT: (C)2004,JPO |
