| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide electronic equipment, having a drive circuit selectively provided with a different transistor, for satisfying the required circuit characteristics. <P>SOLUTION: The electronic equipment is an integrated circuit comprising a thin-film transistor (TFT), composed of a top gate driver 2 with a driving frequency of not higher than 500 kHz and a bottom gate driver 3, to constitute a shift register formed of a thin-film transistor, consisting of amorphous silicon and a single crystal silicon transistor for constituting a drain driver 4 with a drive frequency not lower than 1 MHz. <P>COPYRIGHT: (C)2004,JPO |
