Light-emitting semiconductor device

摘要

A transverse junction strip structure light-emitting semiconductor device (laser) includes a laminated active layer of a multiquantum well structure. A P-type region of the semiconductor device is formed by doping P-type impurities into portions of the active layer and the clad layers between which the active layer is sandwiched. The P-type region includes a mixture region which is formed by diffusing P-type impurities into first semiconductor ultrathin layers serving as wells and second semiconductor ultrathin layers serving as barriers. The mixture region has a larger band gap than the first semiconductor ultrathin layers and forms a heterojunction with the first semiconductor ultrathin layers.