MAGNETIC MEMORY AND MAGNETIC MEMORY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a magnetic memory capable of being multi-valued in order to easily solve attendant problems in high integration. SOLUTION: A magnetic memory includes two or more memory layers and two or more tunnel layers stacked in the thickness direction of the layers, and the two or more memory layers are electrically connected in series. In the magnetic memory, the resistance change caused by the inversion of magnetization in a first layer group comprising at least one layer selected from the two or more memory layers is different from the resistance change caused by the inversion of magnetization in a second layer group comprising at least one layer selected from the two or more memory layers. COPYRIGHT: (C)2004,JPO