Production of a silicon wafer used in the production of a semiconductor component comprises treating the cleaned wafer with an aqueous ozone solution, coating with polycrystalline silicon, finely grinding, and epitaxially growing the wafer

摘要

Production of a silicon wafer (3) having a polished front side and a coating made from polycrystalline silicon on the rear side comprises treating the cleaned wafer with an aqueous ozone solution to form a controlled oxide layer containing 20 x 10 Power 14 to 100 x 10 Power 14 oxygen atoms/cm, coating the wafer with polycrystalline silicon in a vertical CVD reactor, optionally finely grinding the front side of the wafer with a removal of 1-50 microns, polishing the front side of the wafer, and optionally epitaxially growing the wafer. An Independent claim is also included for a silicon wafer formed in the above process.