发明名称 |
Method and apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same |
摘要 |
A method and an apparatus for generating a plasma, and a method and an apparatus for manufacturing a semiconductor device using the plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. The gas plasma is provided into a processing chamber to perform a process for manufacturing the semiconductor device.
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申请公布号 |
US2004092119(A1) |
申请公布日期 |
2004.05.13 |
申请号 |
US20030368344 |
申请日期 |
2003.02.20 |
申请人 |
MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN |
发明人 |
MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN |
分类号 |
H01L21/3065;H01J37/32;H01L21/311;H05H1/30;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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