发明名称 Method and apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
摘要 A method and an apparatus for generating a plasma, and a method and an apparatus for manufacturing a semiconductor device using the plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. The gas plasma is provided into a processing chamber to perform a process for manufacturing the semiconductor device.
申请公布号 US2004092119(A1) 申请公布日期 2004.05.13
申请号 US20030368344 申请日期 2003.02.20
申请人 MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN 发明人 MIN YOUNG-MIN;CHOI DAE-KYU;BAE DO-IN;YANG YUN-SIK;HWANG WAN-GOO;KIM JIN-MAN
分类号 H01L21/3065;H01J37/32;H01L21/311;H05H1/30;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/3065
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