| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate thermal treatment furnace which is capable of uniformly forming a film on the surface of a semiconductor substrate. SOLUTION: The semiconductor substrate thermal treatment furnace is equipped with a furnace core pipe 3 where a semiconductor substrate boat 2 mounted with the semiconductor substrates W is housed and a gas injection nozzle 4 which injects process gas into the furnace core pipe 3. The gas injection nozzle 4 is equipped with, at least, two gas injection ports 4u and 4b which are arranged in a vertical direction. COPYRIGHT: (C)2004,JPO
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