| 摘要 |
PROBLEM TO BE SOLVED: To contribute to the high integration of a semiconductor device by achieving short-time heat treatment in the activation of impurities of the source and drain of a MOS transistor, the formation of an extremely thin film by reaction with an Si substrate, etc. SOLUTION: In a method of manufacturing a semiconductor device, a wafer is inserted into a reaction tube from the insertion end of an electric furnace provided with a first region having a fixed length and a first temperature, a second region having a second temperature higher than the first temperature and a fixed length in the longitudinal direction from the insertion end of the wafer, and a temperature gradient region between these regions, and the wafer is held first in the first temperature region to perform first treatment. Then, the wafer is moved to the second region. After that, the wafer is held until the wafer reaches a predetermined third temperature lower than the second temperature and higher than the first temperature (t2 and t3). Then, second treatment is performed. After that, the wafer is immediately lowered to the second region. COPYRIGHT: (C)2004,JPO
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