| 摘要 |
PROBLEM TO BE SOLVED: To stabilize an operation by securing a potential difference margin for a selection/reference bit line. SOLUTION: A dummy cell (a reference potential generating circuit) DC is provided with a paraelectric capacitor DCC1 and a ferroelectric capacitor DCC2. One end of the capacitor DCC1 and one end of the capacitor DCC2 are both connected to a node N1. A dummy plate potential DPL1 is applied to the other end of the capacitor DCC1 and a dummy plate potential DPL2 is applied to the other end of the capacitor DCC2. When data of a memory cell MC are read to a bit line (a selecting bit line) BL1, a reference potential is supplied to a bit line (a reference bit line) BL2 from the cell DC. COPYRIGHT: (C)2004,JPO
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