METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a pattern of a semiconductor device is provided to be capable of easily obtaining a micro pattern having a large aspect ratio. CONSTITUTION: A thin layer is formed on a substrate(10). The thin layer is formed in the shape of a predetermined pattern(12a) having a recess by carrying out a photo etching process using a photoresist pattern as an etching mask. The photoresist pattern is completely removed from the resultant structure. A cleaning process is performed on the resultant structure for removing contaminants(17) existing in the recess. Preferably, the predetermined pattern is one selected from a group consisting of a contact hole pattern, a via hole pattern, or a dual damascene pattern. Preferably, the contaminants are removed by carrying out an etch-back process or a native oxide layer removing process.