| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with superior electrical characteristics including a silicification process with high controllability. SOLUTION: This method of manufacturing the semiconductor device comprises a process (a) for heating a silicon substrate at 330°C to 395°C while evacuating the inside of a sputtering chamber to 1.5×10<SP>-8</SP>torr to 9×10<SP>-8</SP>torr, a process (b) for sputtering Co on the heated silicon substrate, a process (c) for forming a cap layer with small oxygen permeability on the silicon substrate without exposing the silicon substrate to the air after the process (b), a process (d) for performing primary annealing after the process (c), a process (e) for removing the cap layer and unreacted Co after the process (d), and a process (f) for performing secondary annealing by heating the silicon substrate at 450°C to 750°C after the process (e). COPYRIGHT: (C)2004,JPO
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