发明名称 Film bulk acoustic resonator and method of making the same
摘要 A film bulk acoustic resonator is fabricated in the following manner. First, a base layer is formed on an insulating substrate. Then, a resonator assembly is formed on the base layer. The resonator assembly includes a first electrode held in contact with the base layer, a second electrode, and a piezoelectric layer held between the first and the second electrodes. Then, a resist layer is formed to cover the resonator assembly and the base layer. Then, a through-hole is formed in the resist layer so that the base layer is exposed via the through-hole. Then, etchant is supplied via the through-hole to make a space in the base layer under the resonator assembly. Finally, the resist layer is removed.
申请公布号 US6732415(B2) 申请公布日期 2004.05.11
申请号 US20010984418 申请日期 2001.10.30
申请人 FUJITSU LIMITED;FUJITSU MEDIA DEVICES LIMITED 发明人 NAKATANI TADASHI;MIYASHITA TSUTOMU;SATOH YOSHIO
分类号 H01L41/22;H01L41/08;H03H3/02;H03H9/15;H03H9/17;(IPC1-7):H01L41/08 主分类号 H01L41/22
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