METHOD FOR MANUFACTURING MULTI-REFERENCE SAMPLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a multi-reference sample of a semiconductor device is provided to simplify manufacturing processes and reduce fabrication cost by forming the sample corresponding to many kinds of thin films on one semiconductor substrate alone. CONSTITUTION: The first layer is formed on a semiconductor substrate(100). A plurality of regions are defined at the semiconductor substrate. The first pattern(110a) is formed by carrying out the first etching process on the first layer of the first region. The second layer is uniformly formed on the entire surface of the resultant structure. The second pattern(130) is formed by carrying out the second etching process on the second layer of the second and third region. The third layer is uniformly formed on the entire surface of the resultant structure. The third pattern(150b) is formed by carrying out the third etching process on the third layer of the first and third region. Then, the resultant structure is selectively etched for forming a plurality of patterns spaced apart from each other on the semiconductor substrate corresponding to each region.