发明名称 ELECTRICAL INTERCONNECTION STRUCTURE WITH LINER MADE OF Ti AND TiN, AND FORMING METHOD THEREOF
摘要 PURPOSE: An electrical interconnection structure and a forming method thereof are provided to prevent contaminants from reacting to copper and to restrain the copper from reacting to dielectric by using a liner made of Ti and TiN. CONSTITUTION: A plurality of heat-resistive material contacts(50) are embedded in a first interlevel dielectric(20). A second interlevel dielectric(25) containing carbon is formed on the first interlevel dielectric. An opening is formed in the second interlevel dielectric to expose the contact to the outside. At this time, the carbon of the second interlevel dielectric is deposited on the contact. A first liner made of Ti for gettering the carbon is deposited thereon. A second liner made of TiN is deposited on the first liner. An interconnection layer(60) made of copper is formed on the resultant structure including the opening.
申请公布号 KR20040038651(A) 申请公布日期 2004.05.08
申请号 KR20030068540 申请日期 2003.10.02
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CLEVENGER LARRY;KLEPEIS STANLEY;LU HSIAO LING;MARINO JEFFREY;SIMON ANDREW HERBERT;WANG YUN YU;WONG KWONG HON;YANG CHIH CHAO
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/320 主分类号 H01L23/52
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