| 摘要 |
PURPOSE: A material for a CVD(Chemical Vapor Deposition) and a method of forming a thin film using the same are provided to control easily the composition and to restrain the localization of dopants. CONSTITUTION: A material for a CVD contains a predetermined metal compound. The predetermined metal compound is represented as a first chemical formula, wherein R represents an alkyl radical with carbon of 1 to 8 and M represents a metallic element selected from a group consisting of titanium, germanium, zirconium, stannum, hafnium, and lead.
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