SEMICONDUCTOR DEVICE HAVING MIM STRUCTURE CAPACITOR AND FORMING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having an MIM(Metal Insulator Metal) structure capacitor and a forming method thereof are provided to be capable of obtaining a predetermined lower storage node having a larger surface than that of a conventional lower storage node. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate, an interlayer dielectric(104) formed on the semiconductor substrate, a plurality of buried contact plug(107) connected to predetermined regions of the semiconductor substrate through the interlayer dielectric, and an oxidation barrier pattern(110a) located on the buried contact plug. The semiconductor device further includes a lower storage node(117a) located on the oxidation barrier pattern. At this time, the upper portion of the oxidation barrier pattern has the same surface area as the lower portion of the lower storage node.