APPARATUS AND METHOD FOR CRYSTALLIZING SEMICONDUCTOR LAYER BY REALIZING ENOUGH HORIZONTAL GROWTH FROM CRYSTAL CORE

摘要

PURPOSE: An apparatus and a method for crystallizing semiconductor layer are provided to generate a crystal core at an intended position and to generate a crystallized semiconductor layer by realizing enough horizontal growth from the crystal core. CONSTITUTION: A crystallizing apparatus includes a mask(1), an illumination system(2) illuminating the mask. An incident light has a light intensity distribution of an inverse peak pattern while penetrating the mask. A crystallized semiconductor layer is generated by irradiating a polycrystal semiconductor layer or an amorphous semiconductor layer. The mask includes a light absorption layer, a light scattering layer, a light reflection layer, a light refraction layer, and a light diffraction layer according to the light intensity distribution of the inverse peak pattern.