| 摘要 |
PURPOSE: A method for forming a bit line of a semiconductor device is provided to improve reliability by improving surface roughness of a tungsten film. CONSTITUTION: A silicon substrate(21) with a contact plug is prepared. A titanium film and the first TiN layer(25) are sequentially deposited on the resultant structure. The titanium film is changed to a titanium silicide layer(23b) by RTA(Rapid Thermal Annealing). At this time, an oxide layer is generated on the surface of the first TiN layer. The oxide layer is removed by plasma dry cleaning. The second TiN layer and a tungsten film(29) are sequentially deposited on the first TiN layer.
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