| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving contact margin and preventing agglomeration of impurities. CONSTITUTION: A gate(110) is formed on a semiconductor substrate(100). A buffer layer(120) is formed on the resultant structure. A gate spacer(130) is formed at both sidewalls of the gate to achieve contact area margin. A borderless contact layer(140) is formed on the buffer layer and the gate spacer. A junction region(150) is formed in the substrate. An interlayer dielectric(160) is formed on the resultant structure. A contact(180) is then formed by selectively etching the interlayer dielectric.
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