METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL DOPED WITH HIGH VOLATILE DOPANTS FOR REDUCING REMARKABLY DEGRADATION OF QUALITY DUE TO VOLATILIZATION OF DOPANTS

摘要

PURPOSE: A method of manufacturing a silicon single crystal doped with high volatile dopants is provided to improve the yield and to reduce remarkably the degradation of quality. CONSTITUTION: A single crystal is drawn from a melt of a crucible under predetermined processing conditions. The melt is doped with a first dose of high volatile dopants. The first dose is controlled to obtain a desired resistance for the melt. After a predetermined period(t), at least one after-doping process is performed on the melt with a second dose(ΔN(t)) of the same dopants to compensate the melt for the loss caused by the volatilization of dopants. The second dose is calculated with an expression of Δ N(t) = N0 - N(t) = N0(1 - e¬(-λat)) or ΔN(t) = N0λat.