发明名称 |
Very low effective dielectric constant interconnect Structures and methods for fabricating the same |
摘要 |
A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.
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申请公布号 |
US2004087135(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20020280283 |
申请日期 |
2002.10.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CANAPERI DONALD F.;DALTON TIMOTHY J.;GATES STEPHEN M.;KRISHNAN MAHADEVAIYER;NITTA SATYA V.;PURUSHOTHAMAN SAMPATH;SMITH SEAN P.E. |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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