发明名称 |
One-time programming multiple-level memory cells |
摘要 |
A multiple-level memory cell comprising: a memorization element formed of several polysilicon resistors associated in series between two input/output terminals; and a load in series with said resistive element, the midpoint of this series association forming a read terminal of the memory cell, and the respective junction points of said resistors of the memorization element being accessible.
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申请公布号 |
US2004085806(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030694317 |
申请日期 |
2003.10.27 |
申请人 |
WUIDART LUC;BARDOUILLET MICHEL |
发明人 |
WUIDART LUC;BARDOUILLET MICHEL |
分类号 |
G11C11/56;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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