SUBSTRATE HAVING MULTILAYER FILM AND METHOD FOR MANUFACTURING THE SAME
摘要
<p>A substrate having a multilayer film wherein the film stress is relaxed by forming the multilayer composed of a metal oxide film and a silicon oxide film on a substrate at a high rate through sputtering using a conductive sputtering material, and a method for manufacturing such a substrate having a low-stress multilayer film are disclosed. A substrate having a multilayer film formed by repeating formation of at least a metal oxide film and a silicon oxide film on a substrate one or more times is characterized in that at least one layer of the metal oxide film is such a metal oxide film wherein the oxygen insufficiency is solved by using a metal oxide (MOx) which is short of oxygen than the stoichiometric composition as a target material for the sputtering. The substrate having the multilayer film is also characterized in that the stress of the multilayer film is within the range from -100 MPa to +100 MPa.</p>
