发明名称 |
A semiconductor memory and its production process |
摘要 |
A semiconductor memory comprises: a first conductivity type semiconductor substrate (100) and one or more memory cells each constituted of an island-like semiconductor layer (110) having a recess on a sidewall thereof, a charge storage layer (510) formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, and a control gate (520) formed on the charge storage layer, wherein at least one charge storage layer of said one or more memory cells is partially situated within the recess formed on the sidewall of the island-like semiconductor layer. <IMAGE> |
申请公布号 |
EP1271652(A3) |
申请公布日期 |
2004.05.06 |
申请号 |
EP20020254308 |
申请日期 |
2002.06.20 |
申请人 |
MASUOKA, FUJIO;SHARP KABUSHIKI KAISHA |
发明人 |
ENDOH, TETSUO;MASUOKA, FUJIO;TANIGAMI, TAKUJI;YOKOYAMA, TAKASHI;TAKEUCHI, NOBORU |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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