发明名称 |
Phase changeable memory cells and methods of fabricating the same |
摘要 |
A phase changeable memory cell that includes a substrate, a bottom electrode, a phase changeable material layer pattern, and a top electrode. The bottom electrode is on the substrate. The phase changeable material layer pattern is on the bottom electrode. The top electrode is on the phase changeable material layer pattern, and has a tip that extends toward the bottom electrode.
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申请公布号 |
US2004087074(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030651877 |
申请日期 |
2003.08.29 |
申请人 |
HWANG YOUNG-NAM;LEE SE-HO |
发明人 |
HWANG YOUNG-NAM;LEE SE-HO |
分类号 |
H01L27/10;H01L27/105;H01L27/115;H01L45/00;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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