发明名称 |
Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device |
摘要 |
A method of forming the active regions of field effect transistors is proposed. According to the proposed method, shallow implanting profiles for both the halo structures and the source and drain regions can be obtained by carrying out a two-step damaging and amorphizing implantation process. During a first step, the substrate is damaged during a first light ion implantation step and subsequently substantially fully amorphized during a second heavy ion implantation step.
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申请公布号 |
US2004087120(A1) |
申请公布日期 |
2004.05.06 |
申请号 |
US20030440640 |
申请日期 |
2003.05.19 |
申请人 |
FEUDEL THOMAS;HORSTMANN MANFRED;STEPHAN ROLF |
发明人 |
FEUDEL THOMAS;HORSTMANN MANFRED;STEPHAN ROLF |
分类号 |
H01L21/265;(IPC1-7):H01L21/20;H01L21/36;H01L21/425 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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