Multi-layer silicide block process

摘要

An integrated circuit resistor (170) is formed on an isolation dielectric structure (20) formed in a semiconductor (10). A patterned silicon nitride layer (125) and an optional patterned silicon oxide layer (135) is formed on the surface of the resistor polysilicon layer (40) that functions to mask the surface of the integrated circuit resistor (170) during the formation of metal silicide regions (160) on the integrated circuit resistor (170).