发明名称 Substrate processing apparatus and substrate processing method
摘要 This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.
申请公布号 US6729041(B2) 申请公布日期 2004.05.04
申请号 US20010034520 申请日期 2001.12.28
申请人 TOKYO ELECTRON LIMITED 发明人 SHINDO NAOKI;IINO TADASHI
分类号 H01L21/304;H01L21/00;(IPC1-7):F26B3/00 主分类号 H01L21/304
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