发明名称 |
ETCHER FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An etcher for fabricating a semiconductor device is provided to smoothly supply heat transfer gas for uniformly distributing the heat in a wafer by making the first block of a nozzle part include a plurality of gas supply paths. CONSTITUTION: An etch process is performed in a chamber(100). A chuck is located inside the chamber. A substrate is placed on the chuck having a groove on its upper surface. The nozzle part(200) supplies gas to a space between the lower surface of the substrate and the groove to make the temperature of the substrate placed on the chuck uniform. The nozzle part includes a curved gas supply path to minimize the induction of the process byproducts in the chamber into the gas supply path.
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申请公布号 |
KR20040036778(A) |
申请公布日期 |
2004.05.03 |
申请号 |
KR20020065113 |
申请日期 |
2002.10.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JUNG MO |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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