发明名称 ETCHER FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: An etcher for fabricating a semiconductor device is provided to smoothly supply heat transfer gas for uniformly distributing the heat in a wafer by making the first block of a nozzle part include a plurality of gas supply paths. CONSTITUTION: An etch process is performed in a chamber(100). A chuck is located inside the chamber. A substrate is placed on the chuck having a groove on its upper surface. The nozzle part(200) supplies gas to a space between the lower surface of the substrate and the groove to make the temperature of the substrate placed on the chuck uniform. The nozzle part includes a curved gas supply path to minimize the induction of the process byproducts in the chamber into the gas supply path.
申请公布号 KR20040036778(A) 申请公布日期 2004.05.03
申请号 KR20020065113 申请日期 2002.10.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JUNG MO
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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