| 摘要 |
PURPOSE: A method for isolating a semiconductor device is provided to control a hump characteristic and improve a stable operating characteristic by rounding an edge portion of a shallow trench by a simple method using one mask. CONSTITUTION: A hard mask(105) exposing an isolation region of a device is formed on a semiconductor substrate(100). An inactive ion implantation process is performed on the isolation region of the substrate to form an amorphous layer by using the hard mask. The amorphous layer is firstly etched to form a groove. The substrate is secondly etched to form a shallow trench(110) having a rounded edge by using the hard mask. An oxide process is performed on the resultant structure to form an oxide layer covering the round shallow trench. The oxide layer is eliminated. An isolation layer is formed to fill the shallow trench of the resultant structure. The hard mask is removed.
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