SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND FIELD EFFECT TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with its parasitic capacitance reduced and resistance lowered. SOLUTION: The semiconductor device has a first conductivity type semiconductor substrate and roughly frustum-shape holes formed therein. On the semiconductor substrate, an opposite conductivity layer made of a second conductivity semiconductor which is opposite to the first conductivity semiconductor is formed. On the opposite conductivity layer, a filling layer is formed of a first conductivity semiconductor for filling up the holes. The hole may roughly be a truncated polyhedral pyramid or a truncated triangular pyramid. COPYRIGHT: (C)2004,JPO