发明名称 METHOD FOR PLASMA TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for plasma treatment by which a more uniform deposited film can be formed on a substrate. SOLUTION: In this method, plasma treatment is performed on the substrate set up in a depressible reaction chamber under a plurality of plasma treating conditions by forming plasma in the chamber by supplying high-frequency power to the chamber, in a state where the substrate is rotated by means of a rotating mechanism. The rotational position of the substrate at the changing timing of the plasma treating conditions is changed at every timing. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004134457(A) 申请公布日期 2004.04.30
申请号 JP20020295046 申请日期 2002.10.08
申请人 CANON INC 发明人 TAZAWA DAISUKE;MURAYAMA HITOSHI;KATAGIRI HIROYUKI
分类号 G03G5/08;C23C16/44;C23C16/509;H01L21/205;(IPC1-7):H01L21/205 主分类号 G03G5/08
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