SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To suppress the breakdown voltage drop and to improve the reliability of the gate insulating film in a trench super junction semiconductor element. SOLUTION: A three-dimensional curved shape 20 of a trench terminal is formed in a p-partition region 13 of a parallel pn-junction layer 14 where n-drift regions 12 and p-partition regions 13 extending in a depthwise direction are mutually and repetitively bonded. Parts surrounding the three-dimensional curved shape 20 of the trench terminal in the p-partition regions 13 are set to be p+-regions 21 whose impurity concentration is higher than the lower parts. The electric field becomes stronger in the boundary of the p+-regions 21 and the n-drift regions 12, and the concentration of the electric field to the three-dimensional curved shape 20 of the trench terminal is relieved. The width of the parts surrounding the three-dimensional curved shape 20 of the trench terminal in the p-partition regions 13 can be made wider than the lower parts. COPYRIGHT: (C)2004,JPO