发明名称 FABRICATING AND MOUNTING METHODS FOR FLIP CHIP
摘要 <p><P>PROBLEM TO BE SOLVED: To provide fabricating and mounting methods for a solder bump flip-chip wherein an environmentally friendly plasma gas is used, and any danger against a manufacturing process is made minimum, and further an additional heat source for reflowing is not required. <P>SOLUTION: The fabricating and mounting methods for a solder bump flip-chip includes a step for reflowing bump in an argon-hydrogen plasma process. In the argon-hydrogen plasma process for use in the fabrication of the flip-chip, pressure in a chamber is kept within the range of from 250 to 270 mtorr, and mixed gas of argon and 10 to 20 % hydrogen is supplied with an output of 100 to 200 W into the chamber to produce plasma, and further the flip-chip is exposed to the plasma for 30 to 120 sec. In the argon-hydrogen plasma process used for the packing of the flip, the pressure in the chamber is kept within the range of from 100 to 400 mtorr, the mixed gas of argon and 0 to 20 % hydrogen is supplied with an output of 10 to 50 W into the chamber to produce plasma, and further the flip-chip is exposed to the plasma for 10 to 120 sec. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004134739(A) 申请公布日期 2004.04.30
申请号 JP20030159679 申请日期 2003.06.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 HONG SOON-MIN;BUN EISHUN;PARK MIN-YOUNG;CHOI SEA-GWANG
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/60 主分类号 H01L21/60
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