发明名称 |
METHODS OF INCREASING WRITE SELECTIVITY IN AN MRAM |
摘要 |
MRAM architectures are disclosed that produce an increased write margin and write selectivity without significantly reducing the packing density of the memory. The major axes of the magneto-resistive bits are offset relative to the axes of the digital lines to produce a magnetic field component from the digital line current that extends along the major axis of the magneto-resistive bits. |
申请公布号 |
US2004082082(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030614622 |
申请日期 |
2003.07.07 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI SHAOPING;ZHU THEODORE;ARROTT ANTHONY S.;LIU HARRY;LARSON WILLIAM L.;LU YONG |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):H01L21/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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