发明名称 |
Semiconductor device and protable electronic device |
摘要 |
There is provided a semiconductor device including DTMOS and a substrate variable-bias transistor and a portable electronic device both operable with reduced power consumption. N-type deep well regions (12) are formed in one P-type semiconductor substrate (11). The N-type deep well regions (12, 12) are electrically isolated by the P-type semiconductor substrate (11). Over the N-type deep well regions (12), a P-type deep well region (13) and a P-type shallow well region (15) are formed to fabricate an N-type substrate variable-bias transistor (26). Over the N-type deep well region (12), an N-type shallow well region (14) is formed to fabricate a P-type substrate variable-bias transistor (25). Further a P-type DTMOS (28) and an N-type DTMOD (27) are fabricated.
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申请公布号 |
US2004079999(A1) |
申请公布日期 |
2004.04.29 |
申请号 |
US20030451744 |
申请日期 |
2003.07.31 |
申请人 |
SHIBATA AKIHIDE;IWATA HIROSHI;KAKIMOTO SEIZO |
发明人 |
SHIBATA AKIHIDE;IWATA HIROSHI;KAKIMOTO SEIZO |
分类号 |
H01L21/822;H01L21/761;H01L21/8238;H01L27/04;H01L27/092;(IPC1-7):H01L29/76;H01L31/062 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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