发明名称 |
METHOD FOR IMPROVING INVERSION LAYER MOBILITY IN A SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR |
摘要 |
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities. |
申请公布号 |
WO03003435(A3) |
申请公布日期 |
2004.04.29 |
申请号 |
WO2002IB02299 |
申请日期 |
2002.06.14 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
EGLOFF, RICHARD;MUKHERJEE, SATYENDRANATH;ALOK, DEV;ARNOLD, EMIL |
分类号 |
H01L29/78;H01L21/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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