SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

A first deposition film (2) of low-concentration silicon carbide of first conductivity type is formed on a high-concentration silicon carbide substrate (1) of the first conductivity. A second deposition film (31) composed of a high-concentration gate region of second conductivity type having a first region that is a cut provided selectively on the first deposition film (2) and a third deposition film (32) composed of a second region that is a cut provided selectively on the second deposition film (31) and is wider than the first region, a high-concentration source region (5) of the first conductivity type, and a low-concentration gate region (11) of the second conductivity type are formed. A low-concentration base region (4) of the first conductivity type is formed in the first and second regions and is in contact with the first deposition film (2). As a result, a silicon carbide MOSFET having a low on-resistance and a high breakdown voltage is realized.