SEQUENTIAL DYNAMIC FUNCTIONAL DEVICE

摘要

The inventive sequential dynamic functional device relates to nanoelectronic engineering and can be used, in particular for developing storing devices, time delay lines, control matrixes for flat displays, scanners, sensors etc. Said device uses the excess charge retention effect in the base of a bipolar transistor during a time which is substantially the same or a little higher than the lifetime of secondary current carriers. The operation of the inventive device consists in the following steps: a pulse is supplied to the input of the first cell of the functional device, thereby actuating said cell and sequentially displacing the pulse along a chain. Only one cell operates in that moment, thereby reducing energy consumption to an exceptionally low value. The high reliability of said device is due to the parallel connection of the similar chains. The simple structural design of the cell is embodied in the form of the single integral structure of a horizontal bipolar transistor whose capacitance and resistors are formed by parasitic capacitance and resistance of the base and collector areas of the transistor structure, respectively.