| 摘要 |
PURPOSE: A method of forming isolation layer of a semiconductor device and a method of manufacturing a flash memory cell using the same are provided to obtain uniform pattern on a substrate by narrowing a protruded isolation layer and to prevent occurring of moat by forming a liner oxide layer in the active region. CONSTITUTION: Stacked layers of tunnel oxide, sacrifice oxide and pad nitride having an open area of an isolation region are formed on a semiconductor substrate(100). After a trench is formed on the isolation region, an isolation layer is formed by burying insulation material in the isolation region. The pad nitride layer is then removed and the sacrifice oxide layer is oxidized to form a sacrifice silicon oxide layer(110). Etching is performed on the protruded part(109a) of the isolation layer to narrow width of the protrusion.
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