发明名称 Nano-imprinting stamp
摘要 <p>A micro-cast silicon carbide nano-imprinting stamp comprises a handling substrate, a glue layer, a foundation layer, and nano-sized features connected with the foundation layer and extending outward of the base surface of foundation layer. The nano-sized features have an outer surface defining an imprint profile. The foundation layer and nano-sized features are micro-cast unitary whole formed from silicon carbide-containing material. A micro-cast silicon carbide nano-imprinting stamp comprises a handling substrate (15), a glue layer (17) connected with the handling substrate, a foundation layer (11) connected with the glue layer and including a base surface (13), and nano-sized features (12) connected with the foundation layer and extending outward of the base surface. The nano-sized features have an outer surface defining an imprint profile. The foundation layer and nano-sized features are micro-cast unitary whole formed from silicon carbide-containing material. An independent claim is also included for micro-casting a silicon carbide nano-imprinting stamp by patterning and etching a mold layer to form nano-sized mold cavities, forming nano-sized features and a foundation layer by filling the nano-sized cavities with silicon-carbide containing material, planarizing the foundation layer to form a planar surface, forming a glue layer on the planar surface, bonding a handling substrate with the glue layer by applying pressure and heat to the handling substrate and mold layer until the glue layer forms a mechanical bond with the foundation layer and handling substrate, and removing the mold layer from the foundation layer.</p>
申请公布号 EP1413923(A2) 申请公布日期 2004.04.28
申请号 EP20030256271 申请日期 2003.10.03
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 LEE, HEON;JUNG, GUN-YOUNG
分类号 B82B3/00;B81B1/00;B81C1/00;C04B35/565;H01L21/027;H05K3/12;(IPC1-7):G03F7/00;B29C45/26 主分类号 B82B3/00
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