| 摘要 |
PURPOSE: A method for forming a polymer pattern, a polymer pattern formed by the method and a method for forming a micropattern by using the polymer pattern are provided, to obtain a polymer pattern which is chemically stable and is useful as a mask for etching necessary for production of micro electrical circuits. CONSTITUTION: The polymer pattern is formed by forming a polymerization initiator molecule thin film layer by the self assembly of a polymerization initiator for atom transfer radical polymerization (ATRP) on the surface of a substrate; photo-etching the self-assembled polymerization initiator molecule thin film layer to pattern it; and introducing a polymerization reactant comprising a monomer for ATRP, a ligand and a catalyst to the patterned thin film layer to polymerize it. Preferably the polymerization initiator is represented by the formula 1, wherein X is F, Cl, Br or I.
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