发明名称 |
SEMICONDUCTOR MEMORY DEVICE IMPROVING BIT LINE PRECHARGE TIME |
摘要 |
PURPOSE: A semiconductor memory device is provided to minimize or shorten a bit line precharge time, and to achieve a high speed operation by controlling an isolation transistor more efficiently. CONSTITUTION: According to the semiconductor memory device, an isolation part connects or isolates electrically a memory cell and a sense amp connected through a bit line pair, and an equalization part precharges the bit line pair connected to the memory cell to an equal voltage level during a precharge mode. And an isolation control part applies a driving control signal to drive the isolation part during the precharge mode as an internal power supply voltage level lower than a high voltage level, after a constant time period from the start of a precharge operation of the equalization part.
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申请公布号 |
KR20040034162(A) |
申请公布日期 |
2004.04.28 |
申请号 |
KR20020064244 |
申请日期 |
2002.10.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYEONG DONG;OH, CHI SEONG |
分类号 |
G11C7/12;G11C8/02;G11C11/4094;(IPC1-7):G11C11/409 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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