| 摘要 |
PURPOSE: A magnetic random access memory is provided to control film thickness and magnetic domain of an yoke material easily by separating an yoke material on an upper plane or a bottom plane of a data select line from an yoke material on a side of the data select line. CONSTITUTION: According to the magnetic random access memory, a memory cell stores data using a tunneling magneto resistive effect. The first data select line is arranged above the memory cell and is prolonged along the first direction. The second data select line is arranged below the memory cell, and is prolonged along the second direction crossing the first direction. The first yoke material(25B1) covers an upper plane of the first data select line, and the second yoke material covers a side of the first data select line. And the first barrier layer is arranged between the first yoke material and the first data select line, and between the second yoke material and the first data select line, and separates the first yoke material from the second yoke material.
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