| 摘要 |
PROBLEM TO BE SOLVED: To measure the changes of reflected microwaves with high sensitivity without reforming a material to be measured or extending a measurement time, related to the measurement of the life of a semiconductor carrier based on a microwave photoconductivity attenuation method. SOLUTION: The life of semiconductor carrier is measured by measuring the change of reflected wave of a microwave radiated on a measurement part when pulse light is projected on the measurement part of a semiconductor (5). An optoelectrical crystal (6) provided near the measurement part is irradiated with the measurement light (laser beam), and the intensity of its transmission light is detected with a photodetector (13) after it passes a polarizing plate (12), so that the change in polarization degree of measurement light is measured, which is caused by the change in refractive index of the optoelectrical crystal (6) due to the change of reflection wave at the measurement part of the microwave. COPYRIGHT: (C)2004,JPO
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