发明名称 |
CAPACITOR STRUCTURE AND METHOD FOR PRODUCING THE SAME USING DUAL DAMASCENE PROCESS |
摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure and a method for producing the structure using a dual damascene process. SOLUTION: In the apparatus and production process, a capacitor is formed using a dual damascus process. A bottom plate of the capacitor is electrically connected to an upper first conductive via that is formed according to the dual damascene process. A top plate of the capacitor is connected to an upper second conductive via. A dielectric material is disposed between the top and bottom plates. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004128498(A) |
申请公布日期 |
2004.04.22 |
申请号 |
JP20030334485 |
申请日期 |
2003.09.26 |
申请人 |
AGERE SYSTEMS INC |
发明人 |
MERCHANT SAILESH M;YAN YIFENG W |
分类号 |
H01L21/02;H01L21/768;H01L21/822;H01L23/522;H01L27/04;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|