| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a semiconductor device provided with a heterojunction bipolar transistor and a resistor element in which a high resistance small resistor element is formed while suppressing the variation in resistance. <P>SOLUTION: In the semiconductor device provided with a heterojunction bipolar transistor and a resistor element by forming at least a sub-collector layer, a collector layer, a base layer and an emitter layer sequentially on a semi-insulating substrate from below, at least one layer of the same conductivity as that of the collector layer is provided between the semi-insulating substrate and the sub-collector layer. Furthermore, a resistor layer of a material different from that of the sub-collector layer is provided and the resistive element is constituted of the resistor layer between two electrodes spaced apart from each other. <P>COPYRIGHT: (C)2004,JPO</p> |
