发明名称 PLASMA DOPING METHOD AND EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a plasma doping method and equipment, which are capable of obtaining a certain doping concentration with high controllability and reproducibility. SOLUTION: A vacuum vessel 1 is exhausted with a pump 3 while the prescribed gas is introduced into the vacuum vessel 1 from a gas supply device 2. When a high-frequency power is applied to a coil 8 from a high-frequency power supply 5 as the internal pressure of the vacuum vessel 1 is maintained at a prescribed value, a plasma is generated inside the vacuum vessel 1, so that a substrate 9 mounted on a specimen electrode 6 is subjected to plasma doping. At this point, the travelling waves Pf and reflected waves Pr of the high-frequency power fed to the specimen electrode are sampled at a high speed so as to improve the controllability and reproducibility. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004128208(A) 申请公布日期 2004.04.22
申请号 JP20020290074 申请日期 2002.10.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKUMURA TOMOHIRO;NAKAYAMA ICHIRO;MIZUNO BUNJI;SASAKI YUICHIRO
分类号 H01L21/22;H01L21/265;(IPC1-7):H01L21/22 主分类号 H01L21/22
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